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Integrated injection logic--A new approach to LSI
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1972
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Hardware SecurityElectrical EngineeringEngineeringElectronic Design AutomationElectronic EngineeringCarrier InjectionElectronic DesignFormal MethodsComputer EngineeringComputer ArchitectureBipolar Lsi GatesDigital Circuit DesignMicroelectronicsInjection LogicSemiconductor DeviceMulticollector Transistors
Multicollector transistors for bipolar LSI gates fed by carrier injection will be discussed. Typical results are: 100 gates/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and delay-power product 1 pJ per gate. Supply voltage may be less than 1 V.