2010 IEEE MTT-S International Microwave Symposium · 2010 · 16 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Microwave Integrated CircuitsGallium Nitride Power DevicesGan-based High-frequency DevicesPower GainPower OutputRadio-frequency Devices
We report W-band GaN MMIC's that produce 96% more power at a frequency of 88 GHz in continuous wave (CW) operation than the highest power reported in this frequency band for the best competing solid state technology[1], the InP HEMT. W-band power module containing a single three stage GaN MMIC chip with 600 µm wide output stage produced over 842 mW of output power in CW-mode, with associated PAE of 14.7% and associated power gain of 9.3 dB. This performance was measured at MMIC drain bias of 14 V.