IEEE Transactions on Electron Devices · 2002 · 49 citations · 35 references
EngineeringElectrical EngineeringPhysicsComputational PhysicsSemiconductor DevicesStochastic ModelingDevice ModelingDevice SimulationMonte Carlo MethodsMonte Carlo SimulationNoise In Electronic DevicesNoise In Semiconductor DevicesCorrelation FunctionsCurrent NoiseDrift-diffusion ModelingElectron Impact IonizationIonizationMonte Carlo Device SimulationNoise Analysis In Integrated CircuitsNoise Sources In Semiconductor Materials
For pt. I see ibid., vol. 49, pp. 1250-1257 (2002). Terminal current noise is investigated with Langevin-type drift-diffusion (DD) and hydrodynamic (HD) noise models for one-dimensional (1-D) N/sup +/ NN/sup +/ and P/sup +/ PP/sup +/ structures and a realistic two-dimensional (2-D) SiGe NPN HBT. The new noise models, which are suitable for technology computer aided design (TCAD), are validated by comparison with Monte Carlo (MC) device simulations for the 1-D structures including noise due to particle scattering and generation of secondary particles by impact ionization (II). It is shown that the accuracy of the usual approach based on the DD model in conjunction with the Einstein relation degrades under nonequilibrium conditions. 2-D MC noise simulations are found to be feasible only if the current correlation functions decay on a subpicosecond scale, what is not always the case.
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High-mobility Si and Ge structures
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