Applied Physics Letters · 2007 · 18 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceOpticsOptoelectronicsPhotonicsOptical Properties Of SemiconductorsOptical Properties Of SolidsPhotodetectorsRefractive IndexSemiconductor Crystal GrowthSemiconductor Device MaterialsDevice FabricationHeterojunction PhotodetectorsPhotodetector MaterialsPhotodiodesRefractive Index EngineeringSpectral MeasurementSuperlattice GrowthSuperlattice Materials
The authors demonstrated the realization of p-on-n type II InAs∕GaSb superlattice photodiodes. Growth condition for high quality InAsSb layer lattice matched to GaSb was established for the use of an effective n-contact layer. By studying the effect of various GaSb capping layer thicknesses on the optical and electrical performances, an optimized thickness of 160nm was determined. In comparison to as grown n-on-p superlattice photodiodes, this inverted design of p on n has shown similar quality. Finally, by analyzing Fabry-Perot interference fringes in the front side illuminated spectral measurement, the refractive index of the superlattice was determined to be approximately 3.8.
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