High differential resistance type-II InAs∕GaSb superlattice photodiodes for the long-wavelength infrared

Abstract

Type-II InAs∕GaSb superlattice photodiodes with a 50% cutoff wavelength ranging from 11to13μm are presented. Optimization of diffusion limited photodiodes provided superlattice structures for improved injection efficiency in direct injection hybrid focal plane array applications. Photodiodes with a cutoff wavelength of 12.9μm exhibit an R0A of ∼7Ωcm2 and a Johnson-limited detectivity of 4.03×1010cmHz1∕2W−1 operating at 77K. Quantum efficiency measurements indicate minority carrier diffusion lengths exceeding 3μm.