Total-Ionizing-Dose Response of SiGe HBTs at Elevated Temperatures

Abstract

The total-ionizing-dose response of third-generation SiGe HBTs was investigated at elevated temperatures (80 °C and 130 °C) and compared with the response at 30 °C. The devices show less damage to irradiation at higher temperatures. Annealing experiments and TCAD simulations are used to investigate the degradation mechanism. The reduced degradation in forward mode at elevated temperatures is caused by increased annealing of interface traps primarily due to diffusion and reactions of H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> within the oxide/nitride EB spacer. The degradation is modest at all measured temperatures, allowing these devices to be suitable for radiation-rich environments where elevated temperatures are expected.