Low Voltage and High Speed 1Xnm 1T1C FE-RAM with Ultra-Thin 5nm HZO

Abstract

World-first 1Xnm half-pitch FE-RAM with 8Gb density was fabricated, and operation was confirmed. The conventional FE-RAM maximizes 2Pr by adjusting the capacitor plate voltage according to the data. In this study, despite using a fixed capacitor plate voltage, we showed that memory operation is possible even at a low voltage of ±0.6V by using the pinched hysteresis of 5nm-thick ultra-thin HZO. We measured the switching speed by changing the write time from 5ns to 80ns. 70% of the total polarization can be switched within 20ns tWR (like the DRAM), and the remaining 30% responds to a wide range of write time between 20 and 80ns. For improving the switching speed, it is necessary to reduce bulk defects or design schemes such as Vcore overdrive.