DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited)

Abstract

Owing to its high power, high efficiency, high gain and high frequency capabilities RF-GaN technology has not only dominated satellite, aerospace and telecom industry but also been tapped as the most promising candidate for 5G technology extension to millimeter wave (MMW) applications. Excellent device performances with output power density (Pout) exceeding 3 W/mm and peak power added efficiency (PAE) above 35 % have been demonstrated by Wolfspeed's 5G-MMW capable 28 V, 150-nm gate length (V5) GaN on SiC technology. In this work we show the comprehensive DC (both on and off state) and RF reliability assessment and lifetime projection (both DC and RF) of such MMW capable 28 V rated 150-nm gate length process technology (G28V5). The on-state and off-state results coupled with the reliability without hermiticity (RWOH) capability and intrinsic reliability assessment up to 31.5 GHz demonstrate the maturity and reliability of V5 technology as a true candidate for MMW applications.