RSC Advances · 2021 · 13 citations · 29 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsLight-emitting DiodesLuminescent MaterialsOxide SemiconductorsQuantum WellsSemiconductor Device MaterialsWide-bandgap SemiconductorsElectroluminescenceGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesLight-emitting Diode MaterialsMolecular Beam EpitaxyQuantum Well Light-emitting DiodesQuantum Well StructuresUltraviolet Light-emitting Diodes
O multiple quantum wells (MQWs) were employed as active layers to fabricate the p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It exhibited an efficient UV emission around 370 nm at room temperature. Calculated band structures and carrier distributions showed that electrons were restricted to overflow to the p-type layer, and carriers were confined in the high-quality MQWs well layer.
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Optically pumped lasing of ZnO at room temperature
Darren M. Bagnall, Y. F. Chen, Z. Q. Zhu et al. · Applied Physics Letters · 1997 · 2.2K citations
Mg x Zn 1−x O as a II–VI widegap semiconductor alloy
Akira Ohtomo, M. Kawasaki, Takashi Koida et al. · Applied Physics Letters · 1998 · 1.5K citations · Full text