Electrical Properties of A^IIB^VI Compounds, CdSe and ZnTe

Abstract

The electrical resistivities and the Hall coefficients are determined for stoichiometric, non-stoichiometric and impurity-doped CdSe and ZnTe crystals. From these observations it is concluded that the impurity centers contributing to the electrical conduction are Se-vacancies in CdSe and Zn-vacancies in ZnTe. It is shown that the first ionization energy of a Zn-vacancy is 0.035 eV and the second 0.25 eV. The band gap is estimated at 1.88 eV for CdSe, and 2.12 eV for ZnTe. The Hall mobility of ZnTe varies as T -1.50 in the high temperature region. In addition, the behaviors of the contact between metals and CdSe are studied. In makes a good ohmic contact.