Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure

Abstract

We report the temperature-dependent operation of back-end-of-line (BEOL) compatible amorphous indium-gallium-zinc-oxide ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${a}$ </tex-math></inline-formula> -IGZO) ferroelectric thin-film transistors (FeTFTs) with a large memory window (MW) more than 3 V. Our <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${a}$ </tex-math></inline-formula> -IGZO FeTFTs have a metal–ferroelectric–metal–insulator–semiconductor (MFMIS) stru- cture with Zr-doped HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) as the ferroelectric layer. Characteristics of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${a}$ </tex-math></inline-formula> -IGZO FeTFTs are investigated in the temperature range of −40 °C to 100 °C. We found that: Firstly, the remanent polarization ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${P}_{\text {r}}$ </tex-math></inline-formula> ) of the HZO film increases with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2{P}_{\text {r}}$ </tex-math></inline-formula> from <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim 35~ {\mu }\text{C}$ </tex-math></inline-formula> /cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at −40 °C to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim 40~ {\mu }\text{C}$ </tex-math></inline-formula> /cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 100 °C. Secondly, enhancement in MWs at high temperatures is observed, achieving MWs larger than 3.5 V when the temperature is higher than 60 °C. Thirdly, for the threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> ) at high temperatures, there is a competition between the negative shift caused by higher carrier concentration in the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${a}$ </tex-math></inline-formula> -IGZO channel and positive shift due to the charge trapping at the floating gate in the MFMIS structure. This could be explored to realize good <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> stability.