Jiuren Zhou

Ferroelectric HfZrO<inf>x</inf> Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved I<inf>ds</inf>

Jiuren Zhou, Genquan Han, Qinglong Li et al. · 2016 · 126 citations

Natural Sciences, Electrical Engineering, Materials Science +10

Negative Differential Resistance in Negative Capacitance FETs

Jiuren Zhou, Genquan Han, Jing Li et al. · IEEE Electron Device Letters · 2018 · 123 citations

Engineering, Electrical Engineering, Microelectronics +14

Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids

Jiuren Zhou, Genquan Han, Qinglong Li et al. · IEEE Conference Proceedings · 2016 · 90 citations

Engineering, Electrical Engineering, Materials Science +15

Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing

Jiuren Zhou, Genquan Han, Yue Peng et al. · IEEE Electron Device Letters · 2017 · 78 citations

Engineering, Electrical Engineering, Materials Science +16

Experimental Demonstration of a Ferroelectric HfO₂-Based Content Addressable Memory Cell

Ava J. Tan, Korok Chatterjee, Jiuren Zhou et al. · IEEE Electron Device Letters · 2019 · 64 citations

Engineering, Computer Engineering, Electrical Engineering +14