IEEE Electron Device Letters · 2018 · 123 citations · 23 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyFerroelectric MaterialsField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor InterfacesSemiconductor PhysicsCapacitanceCapacitance-voltage CharacteristicsDifferential ResistanceFerroelectric Field-effect TransistorsNegative Capacitance Field-effect TransistorsVoltage
We report the investigation of negative differential resistance (NDR) in negative capacitance (NC) germanium (Ge) pFETs. The NDR in NC transistors is attributed to the coupling of drain voltage to the internal gate voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">int</sub> via the gate-to-drain capacitance. It is demonstrated that NDR strongly depends on the matching between the NC induced by ferroelectric capacitance C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FE</sub> and the positive capacitance associated with the underlying transistor capacitance C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MOS</sub> . For the non-hysteretic devices, NDR gets pronounced with an increased thickness of ferroelectric film t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">fe</sub> and V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> . This is attributed to the fact that the drain coupling factor is improved with an increased t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">fe</sub> and V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> , leading to the better matching between C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FE</sub> and C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MOS</sub> . For the hysteretic NC transistors, however, NDR is only obtained at the lower V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> , but not observed at higher V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> .
23
Steep-slope hysteresis-free negative capacitance MoS2 transistors
Mengwei Si, Chun-Jung Su, Chunsheng Jiang et al. · Nature Nanotechnology · 2017 · 542 citations · Full text