Publication | Closed Access
Enhancing Ag-alloyed Cu<sub>2</sub>ZnSnS<sub>4</sub> solar cell performance by interfacial modification <i>via</i> In and Al
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Citations
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References
2021
Year
Aluminium NitrideEngineeringPhotovoltaicsIi-vi SemiconductorNanoelectronicsSolar Cell StructuresMetallic Functional MaterialP Type CarriersCompound SemiconductorMaterials EngineeringMaterials ScienceElectrical EngineeringInterface Band AlignmentAl 3+Semiconductor MaterialMicroelectronicsApplied PhysicsSolar CellsOptoelectronicsSolar Cell Materials
Interface doping with In 3+ and Al 3+ improved the concentrations of n and p type carriers on CdS/CAZTS heterojunction and the interface band alignment was also optimized, 11.2% and 10.7% efficiency for devices with ITO and AZO were achieved.
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