Interfacial engineering of a Mo/Hf_0.3Zr_0.7O₂/Si capacitor using the direct scavenging effect of a thin Ti layer

Abstract

The endurance of a Mo/Hf 0.3 Zr 0.7 O 2 /Si capacitor was improved up to 10 9 cycles by using a Ti layer formed prior to the atomic layer deposition of a Hf 0.3 Zr 0.7 O 2 film to avoid direct exposure of Si to ozone with resulting trap density decrease.