Atomic layer deposition of vanadium oxide films for crystalline silicon solar cells

Abstract

. The strong band bending induced at the c-Si surface was confirmed through capacitance-voltage measurements with a built-in voltage value of 683 mV. Besides low contact resistance, vanadium oxide films provide excellent surface passivation with effective lifetime values of up to 800 μs. Finally, proof-of-concept both-side contacted solar cells exhibit efficiencies beyond 18%, shedding light on the possibilities of TMOs deposited by the atomic layer deposition technique.