Concepedia

Strain relaxation and dislocation annihilation in compositionally graded α-(AlxGa1-x)2O3 layer for high voltage α-Ga2O3 power devices

Byung‐Soo Kim, Duyoung Yang, Woonbae Sohn, Seungmin Lee, Hwan-Hee-Chan Choi, Taehoon Jang, Euijoon Yoon, Yongjo Park, Ho Won Jang

Acta Materialia · 2021 · 19 citations · 47 references

DOI

Concepts

References

47

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao, Srabanti Chowdhury, M.A. Hollis et al. · Advanced Electronic Materials · 2017 · 1.4K citations · Full text

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Polymorphism of Ga<sub>2</sub>O<sub>3</sub> and the System Ga<sub>2</sub>O<sub>3</sub>—H<sub>2</sub>O

Rustum Roy, V. G. Hill, E. F. Osborn · Journal of the American Chemical Society · 1952 · 1K citations

, , +11

Growth of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals by the Edge-Defined, Film Fed Growth Method

Hideo Aida, Nishiguchi Kengo, Hidetoshi Takeda et al. · Japanese Journal of Applied Physics · 2008 · 669 citations

, , +14

Thermal expansion of AlN, sapphire, and silicon

Woosoon Yim, R. J. Paff · Journal of Applied Physics · 1974 · 576 citations

, , +14

Heteroepitaxy of Corundum-Structured α-Ga<sub>2</sub>O<sub>3</sub> Thin Films on α-Al<sub>2</sub>O<sub>3</sub> Substrates by Ultrasonic Mist Chemical Vapor Deposition

Daisuke Shinohara, Shizυo Fujita · Japanese Journal of Applied Physics · 2008 · 502 citations

, , +15