IEEE Electron Device Letters · 2021 · 13 citations · 29 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesThin FilmsElectrical ConductivitySemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsThermoelectric MaterialsThin-film TransistorsPower FactorSeebeck CoefficientSeebeck EffectThermoelectric Energy ConversionThermoelectric PropertiesThermoelectric TransportThermoelectric Transport CoefficientsThin Film Thermoelectrics
Progress on improving the thermoelectric power factor (PF) of InGaZnO thin films by various surface treatment techniques has been seriously hindered by the innate coupled but opposing relationship between its electrical conductivity ( σ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e</sub> ) and Seebeck coefficient (S). Therefore, proposing unique solutions to decouple these properties is crucial in advancing its thermoelectric performance. This study demonstrates that the S - σ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e</sub> coupled relationship can be suppressed by integrating InGaZnO in an InGaZnO/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> thin film transistor, leading to a significantly enhanced PF compared to pristine InGaZnO thin films. An exponential increase in σ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e</sub> was observed without the typical severe decline in S. An extremely narrow charge accumulation layer near the InGaZnO/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interface could have formed under a positive applied gate voltage ( V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> ), causing a dramatic reduction of the thermoelectrically active region to an almost two-dimensional surface. By utilizing the Kamiya-Nomura percolation modeling, it was observed that energy filtering occurs at the InGaZnO/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interface. This likely causes a change in the shape of the potential barriers, which leads to the suppression of the S - σ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e</sub> coupling relationship.
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New Directions for Low‐Dimensional Thermoelectric Materials
M. S. Dresselhaus, Gang Chen, Ming Tang et al. · Advanced Materials · 2007 · 4K citations
Thermoelectric Cooling and Power Generation
Francis J. DiSalvo · Science · 1999 · 3.2K citations