International Journal of Circuit Theory and Applications · 2021 · 15 citations · 51 references
EngineeringComputer EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesCmos Circuit DesignCurrent-voltage CharacteristicsDevice CharacterizationIntegrated Circuit DesignTemperature SensorsWide-bandgap Semiconductor DevicesBandgap Reference CircuitsBandgap Reference DesignBandgap ReferencesBandgap Voltage ReferencesLow-power Cmos DesignLow-power Voltage Reference DesignSiliconVoltage Reference Circuits
Summary The paper describes the implementation of a bandgap reference based on native‐MOSFET transistors for low‐power sensor node applications. The circuit can operate from − 55°C to 125°C and with a supply voltage ranging from 1.5 to 4.2 V. Therefore, it is compatible with the temperature range of automotive and military‐aerospace applications, and for direct Li‐Ion battery attach. Moreover, the circuit can operate without any dedicated start‐up circuit, thanks to its inherent single operating point. A mathematical model of the reference circuit is presented, allowing simple portability across technology nodes, with current consumption and silicon area as design parameters. Implemented in a 55‐nm CMOS technology, the voltage reference achieves a measured average (maximum) temperature coefficient of 28 ppm/°C (43 ppm/°C) and a measured sample‐to‐sample variation within 57 mV, with a current consumption of 420 nA at 27°C.
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Robert M. Corless, Gastón H. Gonnet, D. E. G. Hare et al. · Advances in Computational Mathematics · 1996 · 6.2K citations
Analysis and Design of Analog Integrated Circuits
W.R. Betts · Electronics and Power · 1978 · 3.8K citations