Band offsets of (100) <b> <i>β</i> </b>-(AlxGa1−x)2O3/<b> <i>β</i> </b>-Ga2O3 heterointerfaces grown via MOCVD

Abstract

The valence and conduction band offsets at (100) β-(AlxGa1−x)2O3/β-Ga2O3 heterointerfaces with the increasing Al composition are determined via x-ray photoelectron spectroscopy. The (100) β-(AlxGa1−x)2O3 thin films with the Al composition of 0.10 &amp;lt; x &amp;lt; 0.52 are grown on (100) β-Ga2O3 substrates by the metalorganic chemical vapor deposition method. By examining the onset of inelastic energy loss in core-level atomic spectra, the bandgaps of β-Ga2O3 and β-(AlxGa1−x)2O3 alloys with different Al compositions are measured from 4.83 ± 0.12 eV (x = 0) to 5.85 ± 0.08 eV (x = 0.52). The valence band offsets are determined to be −0.06 ± 0.06 eV (x = 0.10), −0.11 ± 0.06 eV (x = 0.33), and −0.19 ± 0.06 eV (x = 0.52). The conduction band offsets of 0.34 ± 0.17 eV (x = 0.10), 0.62 ± 0.17 eV (x = 0.33), and 1.21 ± 0.16 eV (x = 0.52) are determined from the extracted bandgaps of β-(AlxGa1−x)2O3 alloys. The determined band alignments at β-(AlxGa1−x)2O3/β-Ga2O3 interfaces reveal the formation of type-II (staggered gap) heterojunctions for all Al compositions investigated. The bowing parameters obtained from the quadratic fitting of both conduction band minimum and valence band maximum values are estimated to be 1.25 eV and 0.005 eV, respectively.