Radiated disturbance characteristics of SiC MOSFET module

Electromagnetic scattering by surfaces of arbitrary shape

S. Rao, Donald R. Wilton, A.W. Glisson · IEEE Transactions on Antennas and Propagation · 1982 · 5.3K citations

Computing, Computational Engineering, Electrical Engineering +17

A Survey of Wide Bandgap Power Semiconductor Devices

José del R. Millán, Philippe Godignon, X. Perpiñà et al. · IEEE Transactions on Power Electronics · 2013 · 2.5K citations

Engineering, Electrical Engineering, Materials Science +17

An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation With Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations

Niall Oswald, Philip Anthony, Neville McNeill et al. · IEEE Transactions on Power Electronics · 2013 · 491 citations

Engineering, Electrical Engineering, Microelectronics +15

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

Lei Zhang, Xibo Yuan, Xiaojie Wu et al. · IEEE Transactions on Power Electronics · 2018 · 420 citations

Engineering, Electrical Engineering, Microelectronics +12

Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules

Saeed Jahdi, Olayiwola Alatise, Jose Ortiz Gonzalez et al. · IEEE Transactions on Industrial Electronics · 2015 · 154 citations · Full text

Engineering, Electrical Engineering, Power Electronics +16