Investigation of Illumination Effects on the Electrical Properties of Au/GO/p-InP Heterojunction with a Graphene Oxide Interlayer

Abstract

Abstract In this work, the electrical property of Au/graphene oxide/ p -InP hetero-structure has been evaluated by I – V and C – V measurements in dark and illuminated conditions (visible light). The diode exhibited significant rectifying behavior, thus indicating the heterojunction-type diode. The key electrical parameters of heterojunction diode including ideality factor ( n ), series resistance ( R s ), shunt resistance ( R sh ), and barrier height ( Ф b ) are estimated from I – V data based on the theory of thermionic emission. The modified Norde and Cheung’s methods were utilized to evaluate the electrical parameters and compared the results. The current conduction mechanism at different voltage regions of I – V has also been investigated. The variation of 1/ C 2 versus voltage signifies linearity at high frequency (1 MHz), indicating that the type of heterojunction can be abrupt. The experimental outcomes of this study revealed that the performance of heterojunction diode in dark is considerably good as compared to the illumination condition with respect to the lower values of Ф b , n , R s , and interface state density (N ss ).