Temperature-dependent characteristics of Schottky barrier diode on heterogeneous β-Ga ₂ O ₃ ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mover> <mml:mn>2</mml:mn> <mml:mo>ˉ</mml:mo> </mml:mover> <mml:mn>01</mml:mn> </mml:math> )-Al ₂ O ₃ -Si Substrate

Abstract

Abstract We report the β-Ga 2 O 3 ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover> <mml:mn>2</mml:mn> <mml:mo>ˉ</mml:mo> </mml:mover> <mml:mn>01</mml:mn> </mml:math> )/TiN Schottky barrier diode (SBD) on heterogeneous integrated Ga 2 O 3 -Al 2 O 3 -Si (GaOISi) substrate. The interface performance of GaOISi/TiN SBD and its dependence on the ambient temperature ( T amb ) are characterized. The measured capacitance ( C ) versus voltage ( V ) curves are not influenced by the frequency and the ambient temperature, which indicate a stable interface between Ga 2 O 3 and TiN. The SBD on GaOISi demonstrates a high on-state to off-state current ( I ON / I OFF ) ratio of 10 11 , a low R ON of 6.7 mΩ⋅cm 2 , and an on-set voltage full switch-on voltage V on of ∼1.1 V. As the temperature increases from 25 °C to 130 °C, the GaOISi/TiN SBD exhibits a stable I ON / I OFF ratio. Based on the thermionic emission model, the extracted ϕ B,eff decreases from 0.92 to 0.75 eV with the increasing of temperature, which leads to a reduction of V on .