Thermo-optic coefficient of PECVD silicon-rich silicon nitride

Abstract

The thermo-optic coefficient (TOC) of photonic integrated waveguides fabricated on silicon-rich silicon nitride grown by plasma-enanched chemical vapor deposition is characterized for the first time, to the best of our knowledge. The TOC is found to increase linearly with the fractional composition of silicon over a range from that of silicon nitride to a-Si. This finding is significant for improving the power efficiency of thermally tuned photonic integrated circuits.