Cryogenic Characterization and Modeling of Silicon Superjunction MOSFET for Power Loss Estimation

Abstract

This paper presents a simplified semiconductor device characterization technique at cryogenic temperatures. A commercial silicon superjunction MOSFET (650V CoolMOSTM) has been characterized for the DC output, Transfer and Capacitance-Voltage (C-V) characteristics. The results obtained have been utilized to model the device with an industry standard compact model provided by SaberTM. A temperature binning approach has been taken to incorporate the lower temperature behaviors of the device. This model incorporates the non-linear internal capacitance, body diode and the gate resistance. The model has been used to investigate the merit of using the selected silicon power device at cryogenic temperatures by simulating conduction losses and overall energy losses of a typical buck converter and a 5-level cascaded H-Bridge inverter. From these system level simulations, it can be very helpful to compare the performance of the power switches for the applications like future high efficiency, low emission aviation.