Nano Express · 2020 · 10 citations · 29 references
EngineeringOptoelectronic DevicesPlasma Passivation ProcessSemiconductor NanostructuresSemiconductorsLuminescence IntensityIi-vi SemiconductorElectronic DevicesNanoscale ScienceCompound SemiconductorMaterials ScienceUltra-long Gaas NanowiresPhotoluminescencePhysicsNanotechnologyOptoelectronic MaterialsNw SurfaceApplied PhysicsStructural AnalysisNitrogen-plasma PassivationOptoelectronics
Abstract The structural and optical properties of individual ultra-long GaAs nanowires (NWs) were studied after different nitrogen passivation process conditions. The surface morphology of the NWs after passivation was characterized by high resolution transmission electron microscopy (HRTEM) and high angle annular dark field (HAADF) imaging. Electron energy loss spectroscopy (EELS) confirmed the presence of nitrogen on the NW surface. Micro-photoluminescence ( μ -PL) on single NWs indicated an increase of the luminescence intensity upon passivation. This work reveals the efficacy of a plasma passivation process on complex nanometer-scale morphologies.
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