High Performance SiGe Body-On-Insulator (BOI) FinFET Fabricated on Bulk Si Substrate Using Ge Condensation Technique

Abstract

A novel high performance SiGe Body-On-Insulator (BOI) FinFET device fabricated on bulk silicon substrate is demonstrated in this letter. A key fabrication process of “isotropic etching + Ge condensation” is firstly proposed to simultaneously achieve localized insulator below SiGe Fin and suppressed diffusion of Ge atoms, as well as increased Ge content in the channel. The process is compatible with conventional CMOS technology with low cost based on bulk Si substrate. Compared with control bulk Si FinFET fabricated with similar process, the off-state leakage current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ) and the on current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> ) of SiGe BOI FinFET is at least one order of magnitude smaller and 2× larger, respectively, suggesting excellent application potential of the device.