High power GaN-HEMT SPDT switches for microwave applications

Abstract

In this article, the design, fabrication, and on-wafer test of X-Band and 2–18 GHz wideband high-power SPDT MMIC switches in AlGaN/GaN technology are presented. The switches have demonstrated state-of-the-art performance and RF fabrication yield better than 65%. Linear and power measurements for different control voltages have been reported and an explanation of the dependence of the power performances on the control voltage is given. In particular, the X-band switch exhibits a 0.4 dB compression level at 10 GHz when driven by a 38 dBm input signal. The wideband switch shows a compression level of 1 dB at an input drive higher than 38 dBm across the entire bandwidth. © 2009 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2009.