IEEE Photonics Technology Letters · 2020 · 27 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor DevicesLight SourcesLight-emitting DiodesLuminescent MaterialsOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsHeterostructure DesignHeterostructure DevicesHeterostructure MaterialsLight-emitting DevicesMaterial ReflectivityReflectivityUltraviolet Light-emitting DiodesVoltage
P-type contacts with a high reflectivity in the ultraviolet spectral region made of molybdenum/aluminum (Mo/Al) on AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) emitting at 265 nm have been investigated. Optimized Mo/Al contacts are shown to have a high optical reflectivity above 75% at 265 nm. DUV LEDs with an absorbing p-AlGaN heterostructure operated at 20 mA show a 15% higher light output power and a 1 V lower voltage when Mo/Al instead of Pt is used as p-contact. The effect on the voltage of DUV LEDs with a UV-transparent p-side heterostructure is similar. Moreover, DUV LEDs with a Mo/Al contact show a lower operation voltage compared to LEDs with an indium tin oxide/aluminum (ITO/Al) p-contact where the ITO is intended to form a semitransparent low-resistance contact and the Al serves as a reflector.
11
Indium tin oxide contacts to gallium nitride optoelectronic devices
Tal Margalith, O. Buchinsky, Daniel A. Cohen et al. · Applied Physics Letters · 1999 · 236 citations