Simulation Study of Dielectric Modulated Dual Channel Trench Gate TFET-Based Biosensor

Abstract

A dielectric modulated dual channel trench gate tunnel FET (DM-DCTGTFET) based biosensor is proposed for label-free detection of biomolecules. The gate of DM-DCTGTFET is placed vertically in a trench for creating two channels on both sides of the gate. The parallel conduction of two channels enhances the current of the DM-DCTGTFET. Further, in the proposed structure, two cavities are carved in the gate-oxide on either side of gate for biomolecules immobilization. The sensitivity performance of DM-DCTGTFET is analyzed using 2D simulations in the TCAD tool (ATLAS). The proposed structure exhibits high current sensitivity (~10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> ) as well as exorbitant voltage sensitivity (5.2 V) which are significantly higher than the recently reported TFET based biosensors. Therefore, the DM-DCTGTFET biosensor is a highly promising structure due to dual sensing capabilities for biomolecules.