Investigations on deep ultraviolet light-emitting diodes with quaternary AlInGaN streamlined quantum barriers for reducing polarization effect

Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures

Vincenzo Fiorentini, Fabio Bernardini, O. Ambacher · Applied Physics Letters · 2002 · 833 citations

Materials Science, Materials Engineering, Aluminium Nitride +13

Advances in group III-nitride-based deep UV light-emitting diode technology

Michael Kneissl, Tim Kolbe, C.L. Chua et al. · Semiconductor Science and Technology · 2010 · 668 citations

White Oled, Ultraviolet Light, Electrical Engineering +10

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

Hideki Hirayama, Noritoshi Maeda, Sachie Fujikawa et al. · Japanese Journal of Applied Physics · 2014 · 541 citations · Full text

Optical Materials, Future Prospects, Engineering +16

Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

Cyril Pernot, Myung‐Hee Y. Kim, Shinya Fukahori et al. · Applied Physics Express · 2010 · 257 citations

Al Composition, Photonics, Electrical Engineering +12

AlGaN Deep-Ultraviolet Light-Emitting Diodes

Jianping Zhang, X. Hu, A. V. Lunev et al. · Japanese Journal of Applied Physics · 2005 · 107 citations

White Oled, Ultraviolet Light, Electrical Engineering +15