ACS Applied Materials & Interfaces · 2020 · 68 citations · 35 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingPhotodetectorsSemiconductor DetectorsSemiconductor PhysicsTwo-dimensional SemiconductorsUltraviolet DetectorsCrystallinityCrystallinity AnalysisCrystallinity ChangesHexagonal Boron NitrideImpuritiesPhotodetectionPhotodetector MaterialsUltraviolet Photodetectors
, which is significantly higher than that of the intrinsic h-BN device. This work demonstrates that the C doping is a feasible and effective method for improving the performance of h-BN photodetectors.
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Atomic layers of hybridized boron nitride and graphene domains
Lijie Ci, Li Song, Chuanhong Jin et al. · Nature Materials · 2010 · 2.2K citations
Hexagonal boron nitride is an indirect bandgap semiconductor
Guillaume Cassabois, Pierre Valvin, Bernard Gil · Nature Photonics · 2016 · 1.4K citations · Full text
Hunting for Monolayer Boron Nitride: Optical and Raman Signatures