IEEE Photonics Technology Letters · 2020 · 25 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesDisplay TechnologiesIntegrated Circuit DesignIntegrated Circuit DevicesIntegrated Circuit FabricationIntegrated OpticsPhotonic Integrated CircuitsCrosstalkDevice PackagingDisplay SubstratesExtraction EfficiencyLight ExtractionLight Extraction EfficiencyMicro-led DisplaysMicro-leds
In an earlier study micro-LED micro display (<; 1 inch) on silicon CMOS backplane was demonstrated for augmented reality (AR) applications. Here we report the feasibility of wafer-level monolithic integration of micro-LEDs on glass substrate/backplane. Such issues as the cracking of GaN epitaxial layer, the deviation of alignment, and the peeling of insulator are discussed. SU-8 is proposed as the insulator material in vertical micro-LEDs, resulting into improved light extraction efficiency and allowing for the reduced light crosstalk between sub pixels if the integrated reflective mirrors are used. A directly driven micro-LED parallel array with a resolution of 320 × 720 with individual LED size ranging from 5 μm to 28 μm is demonstrated. It is believed that this monolithic technology on glass will play an important role in future high performance and low cost wearable and/or phone displays.
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Mini-LED and Micro-LED: Promising Candidates for the Next Generation Display Technology
Tingzhu Wu, Chin-Wei Sher, Yue Lin et al. · Applied Sciences · 2018 · 763 citations · Full text
High-transparency Ni/Au ohmic contact to <i>p</i>-type GaN
Jinn‐Kong Sheu, Yan‐Kuin Su, G. C. et al. · Applied Physics Letters · 1999 · 214 citations