InfoMat · 2020 · 15 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsNoise In Electronic DevicesNoise In Semiconductor DevicesPhotodetectorsSemiconductor DetectorsSemiconductor PhysicsWide Band Gap SemiconductorsAvalanche Photodiode DetectorsAvalanche PhotodiodesConductionConduction BandElectron Impact IonizationElectron IonizationNoise CharacteristicsSemiconductor Noise
Abstract Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this article, we investigate the band structure‐related mechanisms that influence impact ionization. Band‐structures calculated using an empirical tight‐binding method and Monte Carlo simulations reveal that the mini‐gaps in the conduction band do not inhibit electron impact ionization. Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated. image
16