Development of high-sensitivity pressure sensor with on-chip differential transistor amplifier

Abstract

A mathematical model of a high-sensitivity pressure sensor with a novel electrical circuit utilizing a piezosensitive transistor differential amplifier with negative feedback loop is presented. Circuits utilizing differential transistor amplifiers based on vertical n-p-n and lateral p-n-p transistors are analyzed and optimized for sensitivity to pressure and stability of output signal in operating temperature range. Parameters of fabrication process necessary for modeling of I–V characteristics of transistors are discussed. The results of the model are sufficiently close to the experimental data.