Nitrogen-mediated aligned growth of hexagonal BN films for reliable high-performance InSe transistors

Soon Siang Chng, Jing Wu, Xizu Wang, Zhi Kai Ng, Keke Zhang, Chongyang Liu, Maziar Shakerzadeh, Siuhon Tsang, Edwin Hang Tong Teo

Journal of Materials Chemistry C · 2020 · 12 citations · 35 references

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Abstract

Orientation controlled hexagonal boron nitride (h-BN) films exhibit excellent mechanical and thermal properties, making them attractive for diverse applications.

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