Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf_0.25Zr_0.75O₂ Negative Capacitance FETs

Abstract

Being the first demonstration of quasi-antiferroelertic Hf <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf> Zr <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (QAFE-HZO, Zr=75%) negative-capacitance (NC) FET with non-hysteretic bi-directional sub-60mV/dec (SS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">for</inf> =51mV/dec, SS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rev</inf> =53mV/dec, ΔV <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> <1mV) for low onset voltage and high speed response, both forward & backward (reverse) sweep exhibit obvious N-DIBL and NDR of QAFE-HZO to confirm NC effect. There is an operation window for steep SS without hysteresis for QAFE-HZO as compared with accompanying a non-negligible hysteresis FE-HZO (Zr=50%). The QAFE-HZO is also serviceable for both n-type and p-type channel FETs. The voltage transient response presents NC time 48%-77% improvement and V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FE</inf> overlap of negative dQ/dV <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FE</inf> for forward and reverse, indicating non-hysteretic QAFE-HZO.