A High Efficiency, Ka-Band, GaN-on-SiC MMIC with Low Compression

Abstract

The design and performance of a 28 V, 3-stage, Ka-band, GaN-on-SiC, power amplifier MMIC with high efficiency and low gain compression are presented. At 30 GHz, the MMIC provides saturated power of 37.6 dBm with an associated PAE of 39.8%. P1dB is within 1 dB of saturated power over the 26.5-30.5 GHz band. At 30 GHz, P1dB is 37.1 dBm with an associated PAE of 37.8%. In addition, the MMIC has a low quiescent bias of 72 mA.