High-quality integrated microdisk resonators in the visible-to-near-infrared wavelength range on a 3C-silicon carbide-on-insulator platform

Abstract

In this Letter, we report, to the best of our knowledge, the first demonstration of high-quality integrated microdisk resonators (MDRs) on a 3C-silicon carbide-on-insulator (SiCOI) platform, working over a wide bandwidth from visible to near-infrared wavelengths. We show record-high quality factors for 3C-silicon carbide (SiC) MDRs of 242,000, 112,000, and 83,000 at the wavelengths of 1550 nm, 770 nm, and 650 nm, respectively, based on high-quality 3C-SiC films with the surface roughness as low as 1.4 Å, achieved by sample-transfer bonding, and precise chemical-mechanical polishing of the SiC film, to remove growth defects. Our study of 3C-SiC films grown on Si using transmission electron microscopy shows that even considerably higher-quality single-crystalline SiCOI can be achieved by flipping and thinning down an ultra-thick ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>∼</mml:mo><mml:mrow class="MJX-TeXAtom-ORD"><mml:mn>5</mml:mn><mml:mrow class="MJX-TeXAtom-ORD"><mml:mo>−</mml:mo></mml:mrow><mml:mn>10</mml:mn></mml:mrow><mml:mspace width="thinmathspace"/><mml:mspace width="thinmathspace"/><mml:mtext>µ</mml:mtext><mml:mrow class="MJX-TeXAtom-ORD"><mml:mi mathvariant="normal">m</mml:mi></mml:mrow></mml:math> ) 3C-SiC film grown on Si. The SiCOI platform can be used to realize ultra-wideband high-quality SiC devices that are desirable for applications in nonlinear and quantum photonics.