Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

Abstract

We demonstrate hydride vapor phase epitaxy (HVPE) of AlxGa1–xAs, AlxIn1–xP, and AlxGayIn1–x–yP using an AlCl3 precursor. We study the growth of the AlxGa1–xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl3. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of AlxGa1–xAs, and for the first time by HVPE, AlxIn1–xP and AlxGayIn1–x–yP. These results create exciting implications for HVPE-grown high-efficiency III–V solar cells and devices with reduced cost.