Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route

Nico Koslowski, Rudolf C. Hoffmann, Vanessa Trouillet, Michael Brüns, Sabine Foro, Jörg J. Schneider

RSC Advances · 2019 · 22 citations · 50 references

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Abstract

Transformation of a new molecular precursor allows the formation of yttrium oxide under moderate conditions displaying high voltage breakthrough behaviour.

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