Physical Review B · 2013 · 31 citations · 33 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsElectronic Excited StatesOptical Properties Of SemiconductorsQuantum DotsQuantum OptoelectronicsSemiconductor NanomaterialsSemiconductor PhysicsBiexciton StatesExciton StatesExcitonic MaterialsExcitonsPhotoluminescencePhotoluminescence SpectroscopyQuantum Dot PhotophysicsSemiconductor Quantum Dots
The built-in dipole moments of excitonic and multiexcitonic complexes of GaN/AlN quantum dots (charged and uncharged excitons and biexcitons) are investigated in detail, both experimentally and theoretically. The calculations are done with Hartree-Fock wave functions in the framework of an 8-band $\mathbf{k}\ifmmode\cdot\else\textperiodcentered\fi{}\mathbf{p}$ approximation. Electric dipole moments of different excitonic complexes are found to vary significantly. Hence, their Coulomb coupling to charged defects in the vicinity of a QD produces emission energy variations, known as spectral diffusion, which can be used to identify the emitting excitonic complex. This method was exemplary applied to the presented cathodoluminescence and $\ensuremath{\mu}$-photoluminescence data and opens a way to identify excitonic complexes by their response to external electric fields.
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Band parameters for nitrogen-containing semiconductors
I. Vurgaftman, J. R. Meyer · Journal of Applied Physics · 2003 · 2.7K citations
Entangled Photon Pairs from Semiconductor Quantum Dots
N. Akopian, Netanel H. Lindner, Eilon Poem et al. · Physical Review Letters · 2006 · 892 citations · Full text
Natural Sciences, Physics, Optics +16