IEEE Transactions on Electron Devices · 2019 · 13 citations · 7 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsThin FilmsDevice CharacterizationDevice ModelingDevice SimulationDielectric PropertiesDielectricsSurface ChargeCarrier Transport ModelingCharge DynamicsCharge Transport ModelingDynamic Model DerivationElectron-hole RecombinationNanogeneratorsSurface Charge DensityTriboelectric Nanogenerators
In addition to the traditional existed static model, the dynamic model is proposed to investigate the thickness (d) dependence of tribo-dielectric layer (TDL) with the device performance in the triboelectric nanogenerators (Tengs) in this work. With the involvement of one material parameter, i.e., electron-hole recombination rate (r) near the TDL in our developed dynamic model, the d dependence of TDL for the effective surface charge (Q <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</sub> ) and output current (I) in the Tengs is derived. The maximum I (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ) with the optimized TDL thickness (d <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ) is further obtained with the consideration of different r. It can be found that the larger value of r in the material results in the smaller value of I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> and the larger value of d <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> . At the same time, the theoretical dynamic model is compared with the experimental data. With the designed spin coating speed and time for the TDL deposition, the Tengs with different d is demonstrated and studied experimentally. The experimental data and the theoretical dynamic model agree very well with each other.
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Flexible triboelectric generator
Feng Ru Fan, Zhong‐Qun Tian, Zhong Lin Wang · Nano Energy · 2012 · 6.5K citations