Nanoscale Horizons · 2019 · 21 citations · 39 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsP-n JunctionsComplementary Metal-oxide-semiconductor DevicesComplementary Metal-oxide-semiconductor Inverter DesignComplementary Metal-oxide-semiconductor LogicProcess Time
A MoS<sub>2</sub>-based field effect transistor has been exhibited with the selective operation of either p- or n-type characteristics in the same device. Compared to existing individual devices, our device could save almost twice the process time and price.
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