Experimental Evaluation of Self-Heating and Analog/RF FOM in GAA-Nanowire FETs

Abstract

In this paper, we report the characterization and modeling of multi-finger gate all around (GAA) nanowire (NW) FETs (NWFETs) from dc to 14 GHz. The self-heating effect (SHE) in NWFETs is investigated experimentally using the small-signal output conductance (gds) technique. The frequency-dependent complex thermal impedance, Zth(f), is extracted by fitting an nth-order thermal network with the experimental data. We show that the temperature rise AT (=85 °C) due to SHE is significant in short-channel silicon on insulator (SOI) NWFETs. Finally, we have evaluated the RF figure of merit (FOM) for these NWFETs as fT (=70 GHz) and f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> (=80 GHz). We also report the RF performance metric sensitivity on temperature, ∂f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> /∂T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">amb</sub> (≈ -0.104 GHz/K). The reported BSIM-CMG compact model shows a good correlation with the measurement data.