Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO₄ Precursor

Abstract

Ru thin films were grown by pulsed chemical vapor deposition using RuO4 and 5% H2/95% N2 as the precursor and reducing gas, respectively. The film grown at 230 °C showed the best structural and electrical properties among the chemically grown Ru films ever reported.