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Developing the Chemistry of Novel Scandium β-Diketonates for the MOCVD of Scandium-Containing Oxides
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1999
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Scandium β-DiketonatesEngineeringScandium-containing OxidesSolid-state ChemistryThin Film Process TechnologyChemistryInorganic MaterialChemical EngineeringMhd GroupsApplied ChemistryNovel Scandium β-DiketonatesThin Film ProcessingMaterials ScienceInorganic ChemistryOxide ElectronicsScandium OxideInorganic SynthesisNanomaterialsSurface ScienceThin FilmsChemical Vapor Deposition
Thin films of scandium oxide, Sc2O3, have been deposited by liquid-injection MOCVD using tetrahydrofuran solutions of the novel precursors Sc(tmod)3 (tmod = 2,2,7-trimethyloctane-3,5-dionate) and Sc(mhd)3 (mhd = 6-methylheptane-2,4-dionate). The properties of the films are compared to those of films grown using the conventional precursor Sc(thd)3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate). Oxide growth was observed over a wide range of substrate temperatures, from 400 °C to at least 600 °C, and the films were shown (by Auger electron spectroscopy) to be Sc2O3 with no detectable carbon impurity. The properties of the scandium β-diketonates were found to vary with the nature of the β-diketonate group and the use of the asymmetric tmod and mhd groups led to precursors with lower melting points and higher volatilities than the Sc(thd)3 source.