The Journal of Physical Chemistry B · 2006 · 19 citations · 29 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistryThin FilmsChemical Vapor DepositionSemiconductor PhysicsSurface PhysicsThermal Properties Of MaterialsThin Film AnnealingThin Film Thermal PropertiesAnnealingAnnealing Temperature EffectsGrain BoundariesHexagonal Boron NitrideLine WidthNitride Thin FilmsNitrides Thin FilmsThermal Stability
Thermal stability of well-crystallized cubic boron nitride (cBN) films grown by chemical vapor deposition has been investigated by cathodoluminescence (CL), Raman spectroscopy, and scanning electron microscopy (SEM) with the cBN films annealed at various temperatures up to 1,300 degrees C. The crystallinity of the cBN films further improves, as indicated by a reduction of the relevant Raman line width, when the annealing temperature exceeds 1,100 degrees C. Structural damage or amorphization was observed on the grain boundaries of the cBN crystals when annealing temperature reaches 1,300 degrees C. The CL spectra are found to be unchanged up to 1,100 degrees C after annealing at 500 degrees C, showing the stability of the cBN films in electronic properties up to this temperature. New features were observed in the CL spectra when annealing temperature reaches 1,200-1,300 degrees C.
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High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure
Osamu Mishima, Junzo Tanaka, Shinobu Yamaoka et al. · Science · 1987 · 258 citations
Ultraviolet and infrared spectra of cubic boron nitride
R. M. Chrenko · Solid State Communications · 1974 · 200 citations