Ultraviolet light-emitting diode of a cubic boron nitride <i>p</i> <i>n</i> junction made at high pressure

Abstract

Injection luminescence in the ultraviolet is observed from a cubic boron nitride pn junction diode made at high pressure. Microscopic observation and spectroscopic studies show that the light emission occurs near the junction region only in the forward-bias condition. The spectra extend from ∼215 nm to the red, having a few peaks mainly in the ultraviolet.