25‐1: <i>Invited Paper:</i> Achieving high uniformity and yield of 200 mm GaN‐on‐Si LED epiwafers for micro LED applications with precise strain‐engineering

Abstract

One of the big challenges of micro LED displays is to reduce cost/increase yield and establish excellent manufacturability. Galliumnitride on silicon (GaN‐on‐Si) LED epiwafers offer fundamental cost advantages to the entire process flow for micro LEDs compared with conventional GaN‐on‐sapphire LED epiwafers. However, due to the difficulties of epitaxial growth of GaN‐on‐Si, demonstration of such cost advantages in micro LED application is not wide‐spread yet. In this presentation, we have demonstrated excellent emission uniformity with well‐controlled strain by precise strain‐engineering. This opens the way to use the advantages of GaN‐on‐Si LED epiwafers in the entire supply chain of micro LED making and thus reduce cost significantly and enable high yield manufacturing.